2n4901 ? 2n4902 ? 2n4903 17/10/2012 comset semiconductors 1 3 p p n n p p s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s , , e e p p i i t t a a x x i i a a l l b b a a s s e e the 2n4901, 2n4902, 2n4903 are mounted in jedec to-66 metal case. they are intended for general?purpose switching and power amplifier applications. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector to base voltage 2n4901 -40 v 2n4902 -60 2n4903 -80 v ceo #collector-emitter voltage 2n4901 -40 v 2n4902 -60 2n4903 -80 v cer collector-emitter voltage 2n4901 -40 v 2n4902 -60 2n4903 -80 v ebo emitter-base voltage -5.0 v v cex collector-base voltage v be =1.5 v 2n4901 -40 v 2n4902 -60 2n4903 -80 i c collector current ? continuous -5 a i cm collector current ? peak t p =5 ms -10 a i b base current ? continuous -1 a p tot power dissipation 87.5 w t j junction temperature 200 c t stg storage temperature -65 to +200 c thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case 2 c/w r thja junction to free air thermal resistance 47.3 c/w
2n4901 ? 2n4902 ? 2n4903 17/10/2012 comset semiconductors 2 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(br) collector-emitter breakdown voltage) i c =200 madc, i b =0 2n4901 -40 - - v 2n4902 -60 2n4903 -80 i cbo collector-base cut-off current v ce =-40 v, i e =0 2n4901 - - 0.1 ma v ce =-60 v, i e =0 2n4902 - - 0.1 v ce =-80 v, i e =0 2n4903 - - 0.1 i cex collector cutoff current v ce =-40 v, v eb =1.5 v 2n4901 - - -0.1 ma v ce =-40 v, v eb =1.5 v t case =150c - - -2.0 v ce =-60 v, v eb =1.5 v 2n4902 - - -0.1 v ce =-60 v, v eb =1.5 v t case =150c - - -2.0 v ce =-80 v, v eb =1.5 v 2n4903 - - -0.1 v ce =-80 v, v eb =1.5 v t case =150c - - -2.0 i ebo emitter cutoff current v be =5.0 v, i c =0 2n4901 - - -1.0 ma 2n4902 2n4903 h fe dc current gain (*) v ce =-2.0 v, i c =-1.0 a 2n4901 20 - 80 v 2n4902 2n4903 v ce =-2.0 v, i c =-5.0 a 2n4901 7 - - 2n4902 2n4903 v ce(sat) collector-emitter saturation voltage (*) i c =-1.0 a, i b =-0.1 a 2n4901 - - -0.4 v 2n4902 2n4903 i c =-5.0 a, i b =-1.0 a 2n4901 - - -1.5 2n4902 2n4903 v be base-emitter voltage (*) i c =-1.0 a, v ce =-2.0 v 2n4901 - - -1.2 v 2n4902 2n4903 v be(sat) base-emitter saturation voltage (*) i c =-5.0 a, i b =-1.0 a 2n4901 - 1.7 - v 2n4902 2n4903 h fe forward current transfer ratio (*) v ce =-10 v, i c =-0.5 a f =1mhz 20 - - v f t transition frequency v ce =-10 v, i c =-1.0 a, f=1.0 khz 4 - - mhz i s/b second breakdown collector current t=1 s, v ce =40 v, t case =100c 1.25 - - a (*) pulse width 300 s, duty cycle 2.0%
2n4901 ? 2n4902 ? 2n4903 17/10/2012 comset semiconductors 3 3 mechanical data case to-3 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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